The effect of electrostatic and magnetic vector potentials pattern on electrical properties and the tunneling
magnetoresistance in graphene junction with periodic magnetic vector potentials are theoretically investigated
using the transfer matrix method. The magnetic structure on graphene can control the direction of the magnetizations
which correspond to the parallel and anti-parallel (AP) configurations. In AP magnetic structures with
the applied gate voltage pattern, U_A (U₁ = U₂), the shift of the conductance-peak position as a function of Fermi
energy. The peak corresponds to resonant tunneling, where the incidence energy of the tunneling electron
equals the confinement energy, and the conductance peak decrease approximately linearly with increasing electrostatic
potential. The peak position occurs at EF = 0.5U where it is shifted to higher Fermi energy with higher
gate potential, but for the case of U_B (U₁ = -U₂), the peak height is reduced rapidly, and the width increase as
gate potential increases. Because of the periodic magnetic field with zero spatial average in the antiparallel
structure, we found that the minimum conductivity decreases with increasing magnetic energy. They show suppression
of Klein tunneling which occurs in the zero-conductance plateaus and leads to the robust magnetoresistance
plateau and large positive magnetoresistance appears below magnetic energy. For the case of U_A and
EF more than magnetic energy, we found that the quasi-linear magnetoresistance feature is applied by an electric
field instead of the usual magnetically driven magnetoresistance.