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Magnetic and Electrical Properties of Spinel Copper Ferrite Thin Films
Journal of Magnetics, Volume 23, Number 1, 31 Mar 2018, Pages 1-4
Abstract
Copper ferrite (CuxFe3-xO4) thin films synthesized on α-Al2O3(0001) substrates exhibited the spinel structure for Cu compositions up to x = 1.0. The substituent Cu ions exhibited charge valence of +2, occupying both the tetrahedral and the octahedral sites of the spinel lattice. Magnetic hysteresis measurements on the CuxFe3-xO4 films revealed gradual loss of saturation magnetization (Ms) with increasing x: Ms is reduced to ~50% that of Fe3O4 for x = 1.0. The electrical resistivity (ρ) of the CuxFe3-xO4 films increased with x: ρ for x = 1.0 is larger by a factor of 30 than that of Fe3O4. The evolution of the magnetic and electrical properties of CuxFe3-xO4 can be explained in terms of the competition between the tetrahedral and octahedral Cu2+ density for ferrimagnetic moment and polaronic conduction.
Keywords: copper ferrite; sol-gel; ferrite thin film; magnetization; electrical resistivity
DOI: https://doi.org/10.4283/JMAG.2018.23.1.001
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