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Effect on N Defect in Cu-doped III-nitride Semiconductors
Journal of Magnetics, Volume 16, Number 4, 31 Dec 2011, Pages 332-336
Abstract
We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spinexchange interaction between the Cu-3d and N defect states is important.
Keywords: Cu-doped III-nitrides; nitrogen defect; ferromagnetism
DOI: http://dx.doi.org/10.4283/JMAG.2011.16.4.332
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