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Interface Engineering in Quasi-Magnetic Tunnel Junctions with an Organic Barrier
Journal of Magnetics, Volume 15, Number 4, 31 Dec 2010, Pages 185-189
Abstract
Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.
Keywords: spin filter; EuO; rubrene; Organic spintronics
DOI: 10.4283/JMAG.2010.15.4.185
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