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Magnetoresistance of Planar Ferromagnetic Junction Defined by Atomic Force Microscopy
Journal of Magnetics, Volume 14, Number 4, 31 Dec 2009, Pages 172-174
Abstract
Nanolithography by atomic force microscope local oxidation was applied to the fabrication of planar-type Ni/Ni oxide/Ni junctions from 10 nm-thick Ni films. The junction characteristics were sensitive to the lithography conditions such as the bias voltage. Successful oxidation produced junctions of nonlinear current-voltage characteristics, implying the formation of oxide barriers. Magnetoresistance (MR) at low temperatures resembled that of spin valves.
Keywords: AFM lithography; local oxidation; magnetic tunnel junction; magnetoresistance
DOI: 10.4283/JMAG.2009.14.4.172
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