The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO₃ barrier layer has been stud-ied. The samples with a structure of glass/NiO(600Å)/Co(100Å)/SrTiO₃(400Å)/SrTiO₃(20-100Å)/NiFe(100Å) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (±100 Oe) perpendicular to the junction edge line. In the SrTiO barrier thickness of 40Å, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.