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Home > Issues > Volume 8 (2003) > No.4(pp.129-168)
Dielectric and Magnetic Properties of Co-doped Ni0.65Zn0.35Fe2O4 Thin Films Prepared by Using a Sol-gel Method
Journal of Magnetics, Volume 8, Number 4, 31 Dec 2003, Pages 138-141
Abstract
Ni0.65Zn0.35Fe2O4 thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for Ni0.65Zn0.35Fe2O4 thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 µC/m2. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high Hc and low M sat at x=0.0 and 0.1 were due to the growth of the α- Fe2O3 phase having antiferromagnetic properties. The rapidly decreased Hc and increased M sat at x=0.2 and 0.3 can be explained that the α- Fe2O3 phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The M sat was slightly decreased and the Hc was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.
Keywords: Ni_0.65Zn_0.35Fe_2O_4; Cu contents; NiZn ferrites; sol-gel method
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