Density functional theory calculations provide very accurate physical quantities at zero Kelvin. Nonetheless, it
is necessary to understand how the physical quantities are changed at finite temperatures for real device
application purposes. Here, we investigate the finite temperature dependent magnetic properties of hole doped
2H-VSe2 bilayer structure using atomistic simulation. We find that the Curie temperature of 600 K at the hole
concentration of 2.27×10²⁰ cm-³, and this is enhanced to 620 K at the hole concentration of 3.01×10²⁰ cm-³. We
fit the temperature dependent magnetization curve (M(T)) using both Curie-Bloch and Kuz’min equations. We
also calculate temperature dependent magnetic anisotropy energy. We find that the magnetic anisotropy energy
is almost linearly decreased with increasing temperature. Besides, we obtain that the normalized temperature
dependent anisotropy constant [K(T)/K(0)] shows the relation to the temperature dependent magnetization
curve of [M(T)/M(0)] 2.9, and this is well converged with the exponent of 2.9 in the Callen-Callen theory.