Spin Hall magnetoresistance (SMR) emerges from both spin Hall effect (SHE) and inverse spin Hall effect
(ISHE), which is usually investigated in a nonmagnetic heavy metal (NM) in contact with a ferromagnet (FM).
Depending on the orientation of FM magnetization and spin polarization of NM layer, the transmission or
reflection of the spin current at the FM\NM interface could occur. SMR was investigated in 1.5 nm NiFe\3.0 nm
IrMn3\3.0 nm Pt magnetic heterostructures. IrMn3 thin film grown on ferromagnetic NiFe layer exhibits the
glassy magnetic behavior and displays spin reorientation transition in the magnetic field-temperature space.
Below the Néel temperature of IrMn3, the angle dependence of MR measurement in the xy and xz plane showed
a normal positive SMR. However, a sign change in SMR was observed in the magnetic field applied in the yz
plane. The switching from negative to positive SMR occurs at the field above a critical value of 6 kG. Our
results provide a potential advantage for the source of spin flow in the signal in multilayer heterostructures and
highlight the importance of magnetic structure (Néel vector) in AF, which opens the possible way to manipulate
the spin current transportation and AF memory devices.