We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching
current (I_csw) smaller than 50 μA at 20 nsec. for designed MTJ size of about 50 × 150 nm². The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have
unlimited endurance. Finally, with an empirical equation of I_csw further reduction of I_csw is estimated to clarify that VoCSM has a potential to reduce I_csw down to several μA.