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Home > Issues > Volume 2 (1997) > No.4(pp.111-156)

The Effects of Deposition Rates on Exchange Coupling and Magnetoresistance in NiO Spin-Valve Films

Journal of Magnetics, Volume 2, Number 4, 31 Dec 1997, Pages 143-146
D. G. Hwang(Physics Department, SangJi University), C. M. Park(Physics Department, Dankook University), S. S. Lee(Physics Department, SangJi University), K. A. Lee(Physics Department, Dankook University)
Abstract
The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 Å/min (NiO-Low) and 30 Å/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low\NiO-High\NiO-Low and NiO-High\NiO-Low were investigated.
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