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Rotation Effect of In-plane FM layer on IrMn Based GMR-SV Film

Journal of Magnetics, Volume 22, Number 1, 31 Mar 2017, Pages 7-13
Purevdorj Khajidmaa (Department of Oriental-Western Biomedical Engineering, General Graduate School, Sangji University), Jong-Gu Choi (Department of Oriental Biomedical Engineering, Sangji University), Sang-Suk Lee * (Department of Oriental-Western Biomedical Engineering, General Graduate School, Sangji University)
Abstract
The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in
the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of φ = 0°-360° are depended on the annealing temperature and the magnetization easy
axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(θ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an
isotropic region angle of 110° are 100 °C and 90°, respectively.
Keywords: dual-type giant magnetoresistance-spin valve (GMR-SV) film; annealing temperature; rotation angle; coercivity (Hc); magnetic sensitivity (MS)
DOI: https://doi.org/10.4283/JMAG.2017.22.1.007
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