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Home > Issues > Volume 10 (2005) > No.3(pp.77-132)Ferromagnetism and Anomalous Hall Effect in p-Zn0.99Mn0.01O:P
Journal of Magnetics, Volume 10, Number 3, 30 Sep 2005, Pages 95-98
Hyun-Jung Kim(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology), Jae-Ho Sim(Department of Materials Science and Engineering, Chungnam National University), Hyo-Jin Kim* 
(Department of Materials Science and Engineering, Chungnam National University), Soon-Ku Hong(Department of Materials Science and Engineering, Chungnam National University), Do-Jin Kim(Department of Materials Science and Engineering, Chungnam National University), Young-Eon Ihm(Department of Materials Science and Engineering, Chungnam National University), Woong-Kil Choo(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
(Department of Materials Science and Engineering, Chungnam National University), Soon-Ku Hong(Department of Materials Science and Engineering, Chungnam National University), Do-Jin Kim(Department of Materials Science and Engineering, Chungnam National University), Young-Eon Ihm(Department of Materials Science and Engineering, Chungnam National University), Woong-Kil Choo(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Abstract
We report hole-induced ferromagnetism in diluted magnetic semiconductor Zn0.99Mn0.01films grown on SiO2/Sisubstrates by reactive sputtering. The p-type conduction with hole concentration over 1018cm-3 is achieved by P doping followed by rapid thermal annealing at 800℃ in a N2atmosphere. The p-type Zn0.99Mn0.01O:P is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for p-Zn0.99Mn0.01O:P clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for n-Zn0.99Mn0.01O:P show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in p-Zn0.99Mn0.01O:P .
Keywords: Diluted magnetic semiconductors; Zinc oxide; Ferromagnetism; Anomalous Hall effect
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