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Magnetic and Electronic Properties of Reduced Rutile Ti1-sMnsO2-δThin Films
Journal of Magnetics, Volume 11, Number 1, 31 Mar 2006, Pages 12-15
Abstract
Magnetic and electronic properties of reduced rutile titanium dioxide (TiO2-δ)thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting TiO2-δ:Mn films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near 1019cm-3. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring Mn+3 ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.
Keywords: ferromagnetism; titanium dioxide; oxygen vacancy; Mn-doping
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