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Home > Issues > Volume 12 (2007) > No.2(pp.53-92)Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma
Journal of Magnetics, Volume 12, Number 2, 30 Jun 2007, Pages 81-83
Tomomi Kanazawa* 
(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology), Shin-Ichi Motoyama(Samco Inc.), Takayuki Wakayama(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology), Hiroyuki Akinaga(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology)
(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology), Shin-Ichi Motoyama(Samco Inc.), Takayuki Wakayama(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology), Hiroyuki Akinaga(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology)
Abstract
Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using CHF3/O2/NH3 discharges exchanging CHF3 for CH4 gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to by changing CHF3/CH4/O2/NH3 to CH4/O2/NH3 discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.
Keywords: etching; reactive ion etching; RIE; plasma; NiFe; magnetic film
DOI: 10.4283/JMAG.2007.12.2.81
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