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No.3(pp.101-136)

Home > Issues > Volume 14 (2009) > No.3(pp.101-136)

Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers

Journal of Magnetics, Volume 14, Number 3, 30 Sep 2009, Pages 104-107

Woojin Kim(Department of Materials Science and Engineering, KAIST), Kyung-Jin Lee(Department of Materials Science and Engineering, Korea University), Taek Dong Lee*

(Department of Materials Science and Engineering, KAIST)

Abstract

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (M_s) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing M_s of PELs and decreasing interlayer exchange coupling.

Keywords: current-induced magnetization switching; perpendicular magnetic anisotropy; micromagnetics; magnetic random access memory

DOI: 10.4283/JMAG.2009.14.3.104

Full Text: PDF

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