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No.1(pp.1-51)
Home > Issues > Volume 14 (2009) > No.1(pp.1-51)
 
Electrical Spin Transport in n-Doped In0.53Ga0.47 As Channels
Journal of Magnetics, Volume 14, Number 1, 31 Mar 2009, Pages 23-26
Youn-Ho Park(Center for Spintronics Research, KIST), Hyun-Cheol Koo* (Center for Spintronics Research, KIST), Kyung-Ho Kim(Center for Spintronics Research, KIST), Hyung-Jun Kim(Center for Spintronics Research, KIST), Suk-Hee Han(Center for Spintronics Research, KIST)
Abstract
Spin injection from a ferromagnet into an n-doped In0.53Ga0.47 As channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of 2μV and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.
Keywords: InGaAs bulk channel; non-local measurement; local spin-valve measurement; electrical spin transport
DOI: 10.4283/JMAG.2009.14.1.23
Full Text: PDF
 
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