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| Uniaxial Magnetic Anistotropy of a NiO-Spin Valve Device |
| Journal of Magnetics, Volume 14, Number 1, 31 Mar 2009, Pages 18-22 |
Won-Hyung Lee(Department of Electrical Engineering, Freshman, The Pennsylvania State University), Do-Guwn Hwang(Department of Oriental Biomedical Engineering, Sangji University), Sang-Suk Lee*  (Department of Oriental Biomedical Engineering, Sangji University) |
| Abstract |
| The shape anisotropy effect of a giant magnetoresistance-spin valves (GMR-SV) device with a glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe layered structure for use in the detection of magnetic property of molecules within a cell was investigated. The patterned device was given uniaxial anisotropy during the sputtering deposition and vacuum post-annealing, which was performed at 200 °C under a 300 Oe magnetic field. The pattern size of the device, which was prepared through the photolithography process, was 2Χ15 μm2. The experimental results confirmed that the best design for a GMR-SV device to be used as a biosensor is to have both the axis sensing current and the easy axis of the pinned NiO/NiFe/CoFe triple layer oriented in the direction of the device's width, while the easy axis of the free CoFe/NiFe bilayer should be pointed along the long axis of the device. |
| Keywords: giant magnetoresistance-spin valve (GMR-SV); shape anisotropy effect; magnetic sensitivity; magnetic easy axis |
| DOI: 10.4283/JMAG.2009.14.1.18 |
| Full Text: PDF |
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