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No.3(pp.81-113)

Home > Issues > Volume 13 (2008) > No.3(pp.81-113)

Effect of Tin Codoping on Transport and Magnetic Properties of Chromium-doped Indium Oxide Films

Journal of Magnetics, Volume 13, Number 3, 30 Sep 2008, Pages 88-91

Hyo-Jin Kim*

(Department of Nano Information Systems Engineering, School of Nano Science and Technology, Chungnam National University), Hyoun-Soo Kim(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology), Do-Jin Kim(Department of Nano Information Systems Engineering, School of Nano Science and Technology, Chungnam National University), Young-Eon Ihm(Department of Nano Information Systems Engineering, School of Nano Science and Technology, Chungnam National University), Woong-Kil Choo(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology), Chan-Yong Hwang(Advanced Industrial Technology Group, Division of Advanced Technology, Korea Research Institute of Standards and Science)

Abstract

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped In₂O₃thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped In₂O₃film, which may have applications in transparent oxide semiconductor spin electronics devices.

Keywords: diluted magnetic semiconductors; indium tin oxide; ferromagnetism; magnetotransport

DOI: 10.4283/JMAG.2008.13.3.88

Full Text: PDF

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