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| Using Electron-beam Resists as Ion Milling Mask for Fabrication of Spin Transfer Devices |
| Journal of Magnetics, Volume 12, Number 1, 31 Mar 2007, Pages 12-16 |
Yen Thi Nguyen Hoang(Nano Device Research Center, Korea Institute of Science and Technology), Hyun-Jung Yi(Nano Device Research Center, Korea Institute of Science and Technology), Kyung-Ho Shin*  (Nano Device Research Center, Korea Institute of Science and Technology) |
| Abstract |
| Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed. |
| Keywords: spin transfer; nano-scale junctions; spin valves; e-beam resist; subtractive process |
| DOI: 10.4283/JMAG.2007.12.1.12 |
| Full Text: PDF |
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