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No.1(pp.1-59)

Home > Issues > Volume 11 (2006) > No.1(pp.1-59)

Co Ion-implanted GaN and its Magnetic Properties

Journal of Magnetics, Volume 11, Number 1, 31 Mar 2006, Pages 16-19

Woo-Chul Kim*

(Department of Physics, Chungbuk National University), Hee-Jae Kang(Department of Physics, Chungbuk National University), Suk-Keun Oh(Department of Physics, Chungbuk National University), Sang-Won Shin(Korea Institute of Science and Technology), Jong-Han Lee(Korea Institute of Science and Technology), Jong-Han Song(Korea Institute of Science and Technology), Sam-Kyu Noh(Korea Research Institute of Standards and Science), Sang-Jun Oh(Korea Basic Science Institute), Sam-Jin Kim(Department of Physics, Kookmin University), Chul-Sung Kim(Department of Physics, Kookmin University)

Abstract

2-µm thick GaN epilayer was prepared, and 80 KeV Co^-ions with a dose of 3×10¹⁶cm^-2were implanted into GaN at 350℃. The implanted samples were post annealed at 700℃. We have investigated the magnetic and structural properties of Co ion-implanted GaN by various measurements. HRXRD results did not show any peaks associated with second phase formation and only the diffraction from the GaN layer and substrate structure were observed. SIMS profiles of Co implanted into GaN before and after annealing at 700℃ have shown a projected range of ~390Å with 7.4% concentration and that there is little movement in Co. AFM measurement shows the form of surface craters for 700℃-annealed samples. The magnetization curve and temperature dependence of magnetization taken in zero-field-cooling (ZFC) and field-cooling (FC) conditions showed the features of superparamagnetic system in film. XPS measurement showed the metallic Co 2p core levels spectra for 700℃-annealed samples. From this, it could be explained that magnetic property of our films originated from Co magnetic clusters.

Keywords: magnetic semiconductor; ion implantation

DOI:

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