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No.1(pp.1-59)

Home > Issues > Volume 11 (2006) > No.1(pp.1-59)

Magnetic and Electronic Properties of Reduced Rutile Ti_1-sMn_sO_2-δThin Films

Journal of Magnetics, Volume 11, Number 1, 31 Mar 2006, Pages 12-15

Kwang-Joo Kim*

(Department of Physics, Konkuk University), Young-Ran Park(Department of Physics, Konkuk University), Geun-Young Ahn(Department of Physics, Kookmin University), Chul-Sung Kim(Department of Physics, Kookmin University)

Abstract

Magnetic and electronic properties of reduced rutile titanium dioxide (TiO_2-δ)thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting TiO_2-δ:Mn films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near 10¹⁹cm^-3. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring Mn⁺³ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

Keywords: ferromagnetism; titanium dioxide; oxygen vacancy; Mn-doping

DOI:

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