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No.1(pp.1-59)
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Magnetotransport Properties of MnAs Film on GaAs(001) Substrate
Journal of Magnetics, Volume 11, Number 1, 31 Mar 2006, Pages 5-7
Asawin Sinsarp* (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST)), Takashi Manago(Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST)), Hiroyuki Akinaga(Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST))
Abstract
The magnetotransport properties at room temperature of the 250-nm-thick MnAs(-1100) film grown on GaAs(001) substrate by molecular beam epitaxy was investigated. The results measured with various magnetic field directions were reported. They show the negative magnetoresistive effect for all field directions. The difference in the magnetoresistance curves for different field directions is in agreement with the magnetic anisotropy of the film.
Keywords: manganese arsenide; MnAs; gallium arsenide; GaAs; molecular beam epitaxy; MBE; magnetotransport; magnetoresistance
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