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No.4(pp.133-170)

Home > Issues > Volume 10 (2005) > No.4(pp.133-170)

Electrical Resistivity and Charge Density of Bismuth Telluride Doped with Erbium

Journal of Magnetics, Volume 10, Number 4, 31 Dec 2005, Pages 149-151

Tae-Ho Yeom*

(Division of Applied Science, Cheongju University)

Abstract

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, Bi_2-xEr_xTe₃with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78µΩcm at 4.2 K. The charge density of Bi_2-xEr_xTe₃is found to be at 4.2 K. It turns out that Bi_2-xEr_xTe₃is a p-type semiconductor. It is discussed that the high mobility and less density support that Bi_2-xEr_xTe₃is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

Keywords: Bi2-xErxTe3 single crystal; electric property; resistivity; charge density

DOI:

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