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No.4(pp.133-170)

Home > Issues > Volume 10 (2005) > No.4(pp.133-170)

Effect of Thermal Treatment on AiO_χ/Co₉₀Fe₁₀Interface of Magnetic Tunnel Junctions Prepared by Radical Oxidation

Journal of Magnetics, Volume 10, Number 4, 31 Dec 2005, Pages 137-141

Don-Koun Lee(Ceramic Engineering, Advanced Materials Engineering, Yonsei University), Jang-Sik In(Ceramic Engineering, Advanced Materials Engineering, Yonsei University), Jong-Ill Hong*

(Ceramic Engineering, Advanced Materials Engineering, Yonsei University)

Abstract

We confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly resulted from the redistribution of oxygen at the AiO_χ/Co₉₀Fe₁₀ interface. The as-deposited Al oxide barrier was oxygen-deficient but most of it re-oxidized into Al₂O₃, the thermodynamically stable stoichiometric phase, through thermal treatment. As a result, the effective barrier height was increased from 1.52 eV to 2.27 eV. On the other hand, the effective barrier width was decreased from 8.2Å to 7.5Å. X-ray absorption spectra of Fe and Co clearly showed that the oxygen in the CoFe layer diffused back into the Al barrier and thereby enriched the barrier to close to a stoichiometirc Al₂O₃phase. The oxygen bonded with Co and Fe diffused back by 6.8Å and 4.5Å after thermal treatment, respectively. Our results confirm that controlling the chemical structures of the interface is important to improve the properties of magnetic tunnel junctions.

Keywords: tunneling magnetoresistance; Fe oxide; Co oxide; Al2O3 barrier; x-ray absorption spectroscopy; chemical fine structure

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