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No.4(pp.133-170)
Home > Issues > Volume 10 (2005) > No.4(pp.133-170)
 
Annealing Temperature Dependence of Exchange Bias Effect in Short Time Annealed NiFe/NiMn Bilayer Thin Film by FMR Measurement
Journal of Magnetics, Volume 10, Number 4, 31 Dec 2005, Pages 133-136
Yong-Goo Yoo* (Electronics and Telecommunications Research Institute), Nam-Seok Park(Department of Electrical and Electronic engineering, Chungju National University), Seong-Gi Min(Department of Physics, Chungbuk National University), Seong-Cho Yu(Department of Physics, Chungbuk National University)
Abstract
The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at 250℃ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.
Keywords: exchange bias; NiMn; unidirectional anisotropy; uniaxial anisotropy; FMR
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