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No.3(pp.77-132)

Home > Issues > Volume 10 (2005) > No.3(pp.77-132)

Potential for Novel Magnetic Structures by Nanowire Growth Mechanisms

Journal of Magnetics, Volume 10, Number 3, 30 Sep 2005, Pages 108-112

R.R. Lapierre*

(Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University), M.C. Plante(Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University)

Abstract

GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 25 and 200 nm as the catalytic agents. The growth rate and structure of the nanowires were investigated for substrate temperatures between 500 and 600℃ to study the mass transport mechanisms that drive the growth of these crystals. The possibilities for fabrication of novel magnetic nanostructures by suitable choice of growth conditions are discussed.

Keywords: Nanowires; Molecular beam epitaxy; Gallium arsenide

DOI:

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