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| Electron Transport of Low Transmission Barrier between Ferromagnet and Two-Dimensional Electron Gas (2DEG) |
| Journal of Magnetics, Volume 10, Number 2, 30 Jun 2005, Pages 66-70 |
H. C. Koo*  (Nano Device Research Center, Korea Institute of Science and Technology), Hyunjung Yi(Nano Device Research Center, Korea Institute of Science and Technology), J. B. Ko(Nano Device Research Center, Korea Institute of Science and Technology), J. D. Song(Nano Device Research Center, Korea Institute of Science and Technology), Joonyeon Chang(Nano Device Research Center, Korea Institute of Science and Technology), S. H. Han(Nano Device Research Center, Korea Institute of Science and Technology) |
| Abstract |
| The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with Al2O3 tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier. |
| Keywords: 2DEG; GaAs; InAs; ohmic; schottky; potentiometric measurement |
| DOI: |
| Full Text: PDF |
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