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No.2(pp.27-68)

Home > Issues > Volume 9 (2004) > No.2(pp.27-68)

GMR in Multilayers with an Alternating In-plane and Perpendicular Anisotropy

Journal of Magnetics, Volume 9, Number 2, 30 Jun 2004, Pages 40-46

F. Stobiecki*

(Institute of Molecular Physics Polish Academy of Sciences), B. Szymanski(Institute of Molecular Physics Polish Academy of Science), T. Lucinski(Institute of Molecular Physics Polish Academy of Science), J. Dubowik(Institute of Molecular Physics Polish Academy of Science), M. Urbaniak(Institute of Molecular Physics Polish Academy of Science), K. Roll(University Gh-Kasse), J.B Kim(q-Psi and Department of Physics, Hanyang Universit), K.W Kim(q-Psi, Hanyang University, and Dept. of Physics, Sunmoon Universit), Y.P Lee(q-Psi and Department of Physics, Hanyang University)

Abstract

The magnetic properties of sputtered (Ni₈₃Fe₁₇/Au/Co/Au) multilayers with various thicknesses of Au (0.5≤ t_Au≤ 3nm), Ni-Fe (1≤ t_Ni-Fe≤ 4nm) and Co (0.2≤ t_Co≤ 1.5nm) layers were characterized. An alternating in-plane and out-of-plane anisotropy of the ferromagnetic layers was achieved for the structures (t_Au≥ 1.5nm) showing a weak coupling between the Ni-Fe layers with an in-plane anisotropy and the Co layers (0.3 ≤ t_Co≤ 1.2nm) with a perpendicular anisotropy. For such a structure, a detailed discussion on the GMR effect is presented, relating to the magnetization reversal from a mutually perpendicular magnetic configuration at the remanence to a parallel one at the saturation. An influence of the dense labyrinth domain structure on the magnetoresistance effect is also addressed.

Keywords: GMR; perpendicular anisotropy; multilayers; domain structure

DOI:

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