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No.1(pp.1-26)

Home > Issues > Volume 9 (2004) > No.1(pp.1-26)

Relative Magneto-current of Magnetic Tunnel Transistor with Amorphous n-type Si Film

Journal of Magnetics, Volume 9, Number 1, 31 Mar 2004, Pages 23-26

Sang-Suk Lee*

(Department of Computer and Electronic Physics, Sangji University), Jin-Yong Lee(Department of Computer and Electronic Physics, Sangji University), Do-Guwn Hwang(Department of Computer and Electronic Physics, Sangji University)

Abstract

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage (V_EB) of 0.65 V at room temperature. Above a V_EBof 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

Keywords: magneto-current; magnetic tunnel transistor; amorphous n-type Si film; emitter-base bias voltage; collector current; transfer ratio

DOI:

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