| |
| Dielectric and Magnetic Properties of Co-doped Ni0.65Zn0.35Fe2O4 Thin Films Prepared by Using a Sol-gel Method |
| Journal of Magnetics, Volume 8, Number 4, 31 Dec 2003, Pages 138-141 |
Hyunsook Lee*  (Department of Computer and Electronic Physics, Sangji University), Jae-Gwang Lee(Department of Applied Physics. Konkuk University), K. S. Baek(Department of Physics, Yonsei University), H. N. Oak(Department of Physics, Yonsei University) |
| Abstract |
| Ni0.65Zn0.35Fe2O4 thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for Ni0.65Zn0.35Fe2O4 thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 µC/m2. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high Hc and low M sat at x=0.0 and 0.1 were due to the growth of the α- Fe2O3 phase having antiferromagnetic properties. The rapidly decreased Hc and increased M sat at x=0.2 and 0.3 can be explained that the α- Fe2O3 phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The M sat was slightly decreased and the Hc was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process. |
| Keywords: Ni_0.65Zn_0.35Fe_2O_4; Cu contents; NiZn ferrites; sol-gel method |
| DOI: |
| Full Text: PDF |
|
|
 |
|
|
