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Large Tunneling Magnetoresistance of a Ramp-type Junction with a SrTiO3 Tunneling Barrier |
Journal of Magnetics, Volume 8, Number 2, 30 Jun 2003, Pages 89-92 |
Sang-Suk Lee* (Department of Computer and Electronic Physics, Sang-Ji University), Moon-Sung Yoon(Department of Computer and Electronic Physics, Sang-Ji University), Do-Guwn Hwang(Department of Computer and Electronic Physics, Sang-Ji University), Kungwon Rhie(Department of Physics, Korea University) |
Abstract |
The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO3 barrier layer has been stud-ied. The samples with a structure of glass/NiO(600Å)/Co(100Å)/SrTiO3(400Å)/SrTiO3(20-100Å)/NiFe(100Å) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (±100 Oe) perpendicular to the junction edge line. In the SrTiO barrier thickness of 40Å, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction. |
Keywords: Ramp-edge type junction; Tunneling magnetoresistance (TMR); SrTiO tunneling barrier; I-V characteristics |
DOI: |
Full Text: PDF |
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