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No.3(pp.63-125)
Home > Issues > Volume 7 (2002) > No.3(pp.63-125)
 
Characteristics of a Carbon Nanotube-based Tunnel Magnetoresistance Device
Journal of Magnetics, Volume 7, Number 3, 30 Sep 2002, Pages 98-100
Jinhee Kim* (Electronic Device Group, Korea Research Institute of Standards and Science), Byung-Chill Woo(Electronic Device Group, Korea Research Institute of Standards and Science), Jae-Ryoung Kim(Department of Physics, Chonbuk National University), Jong-Wan Park(Department of Physics, Chonbuk National University), Hye-Mi So(Department of Physics, Chonbuk National University), Ju-Jin Kim(Department of Physics, Chonbuk National University)
Abstract
Tunnel magnetoresistive devices using an individual multi-walled carbon nanotube were fabricated and their low-temperature electrical transport propertiers were investigated. With the ferromagnetic Co electrodes, the multi-walled carbon nanotube exhibited hysteretic magnetoresistance curve at low temperatures. Depending on the temperature and the bias current, the magnetoresistance ratio can be as high as 16% at the temperature of 2.2 K. Such high magnetoresistance ratio indicates a long diffusion length of the multi-walled carbon nanotube.
Keywords: carbon nanotube; magnetic tunnel junction; spin injection; spintronic device
DOI:
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