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| Sensitivity of an Anisotropic Magnetoresistance Device with Different Bias Conditions |
| Journal of Magnetics, Volume 6, Number 1, 31 Mar 2001, Pages 36-41 |
T. S. Kim(Department of Physics, Ajou University), K. C. Kim(Department of Physics, Ajou University), Kibo Kim(Department of Physics, Ajou University), K. Koh(Department of Physics, Ajou University), Y. J. Song*  (Department of Physics, Ajou University), Y. S. Kim(Department of Metallurgical Eng., Sung Kyun Kwan University), S. J. Suh(Department of Metallurgical Eng., Sung Kyun Kwan University), Y. S. Kim(Material Science Team, Korea Basic Science Institute) |
| Abstract |
| A micromagnetic model and a single-domain model simulation programs were used to analyze the sensitivity of a 20 µm × 60 µm × 1000 Å permalloy strip as a magnetoresistance sensor with bias fields of various directions and magnitudes. The micromagnetic model agrees with the measured sensitivity data better than the single-domain model. The data show the highest peak sensitivity with the bias field at 90° to the current. The peak sensitivity decreases and the peak broadens as the bias angle decreases. The simulation using the micromagnetic model shows that a bias angle smaller than 90° leads to magnetization patterns which are free from closure domains or vertices over a wider range of bias fields. |
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