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| The Effects of Deposition Rates on Exchange Coupling and Magnetoresistance in NiO Spin-Valve Films |
| Journal of Magnetics, Volume 2, Number 4, 31 Dec 1997, Pages 143-146 |
| D. G. Hwang(Physics Department, SangJi University), C. M. Park(Physics Department, Dankook University), S. S. Lee(Physics Department, SangJi University), K. A. Lee(Physics Department, Dankook University) |
| Abstract |
| The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 Å/min (NiO-Low) and 30 Å/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low＼NiO-High＼NiO-Low and NiO-High＼NiO-Low were investigated. |
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