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The Magnetic Field Dependence Properties of Quasi Two Dimensional Electron-piezoelectric Potential Interacting System in GaN and ZnO
Journal of Magnetics, Volume 16, Number 4, 31 Dec 2011, Pages 408-412
S. H. Lee (Department of Electrical Engineering, Donga University), J. Y. Sug * (School of Phys. & Ener. Science, Kyungpook National University), J. H. Lee (Department of Materials Science & Engineering, Donga University), J. T. Lee (Department of Electrical Engineering, Donga University)
Abstract

We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work , we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, γ (B)total of GaN <γ(B)total of ZnO in the magnetic field region B < 25 Tesla.


 

Keywords: GaN and ZnO; quantum transport theory; equilibrium average projection scheme (EAPS); electron phonon coupling system; quantum transition line shapes (QTLS); quantum transition line widths (QTLW)
DOI: http://dx.doi.org/10.4283/JMAG.2011.16.4.408
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