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Multilevel Magnetization Switching in a Dual Spin Valve Structure

Journal of Magnetics, Volume 16, Number 4, 31 Dec 2011, Pages 328-331

B. S. Chun (Korea Research Institute of Standards and Science, Division of Industrial Metrology), J. S. Jeong *

(School of Electrical and Computer Engineering, University of Seoul)

Abstract

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent antiferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-toplane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed

Keywords: GMR spin valve; multi-bit memory; dual spin valve; current-perpendicular-to-plane GMR

DOI: http://dx.doi.org/10.4283/JMAG.2011.16.4.328

Full Text: PDF

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