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Effects of Rapid Thermal Anneal on the Magnetoresistive Properties of Magnetic Tunnel Junction

Journal of Magnetics, Volume 6, Number 4, 31 Dec 2001, Pages 122-128

K.I. Lee(Korea Institute of Science and Technology), J.H. Lee(Korea Institute of Science and Technology, Dept. of Physics, Korea University), K. Rhie(Korea Institute of Science and Technology, Dept. of Physics, Korea University), J.G. Ha(Dept. of Electroinc materials Engineering, Kwangwoon University), K.H. Shin*

(Korea Institute of Science and Technology)

Abstract

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300℃, reaching ∼46%. A TEM image reveals a structural change in the interface of Al₂O₃layer for the MTJ annealed by RTA at 300℃. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

Keywords: Magnetic tunnel junction; Tunneling magnetoresistance; Rapid thermal anneal

DOI:

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