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Annealing Temperature Dependence of Exchange Bias Effect in Short Time Annealed NiFe/NiMn Bilayer Thin Film by FMR Measurement |
Journal of Magnetics, Volume 10, Number 4, 31 Dec 2005, Pages 133-136 |
Yong-Goo Yoo* (Electronics and Telecommunications Research Institute), Nam-Seok Park(Department of Electrical and Electronic engineering, Chungju National University), Seong-Gi Min(Department of Physics, Chungbuk National University), Seong-Cho Yu(Department of Physics, Chungbuk National University) |
Abstract |
The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at 250℃ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature. |
Keywords: exchange bias; NiMn; unidirectional anisotropy; uniaxial anisotropy; FMR |
DOI: |
Full Text: PDF |
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