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Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma |
Journal of Magnetics, Volume 12, Number 2, 30 Jun 2007, Pages 81-83 |
Tomomi Kanazawa* (Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology), Shin-Ichi Motoyama(Samco Inc.), Takayuki Wakayama(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology), Hiroyuki Akinaga(Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology) |
Abstract |
Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using CHF3/O2/NH3 discharges exchanging CHF3 for CH4 gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to by changing CHF3/CH4/O2/NH3 to CH4/O2/NH3 discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering. |
Keywords: etching; reactive ion etching; RIE; plasma; NiFe; magnetic film |
DOI: 10.4283/JMAG.2007.12.2.81 |
Full Text: PDF |
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