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Magnetoresistance of Planar Ferromagnetic Junction Defined by Atomic Force Microscopy
Journal of Magnetics, Volume 14, Number 4, 31 Dec 2009, Pages 172-174
D. S. Yu (Department of Physics and Institute of Fundamental Physics, Sejong University), S. K. Jerng (Department of Physics and Institute of Fundamental Physics, Sejong University), Y. S. Kim (Department of Physics and Institute of Fundamental Physics, Sejong University), S. H. Chun * (Department of Physics and Institute of Fundamental Physics, Sejong University)
Abstract
Nanolithography by atomic force microscope local oxidation was applied to the fabrication of planar-type Ni/Ni oxide/Ni junctions from 10 nm-thick Ni films. The junction characteristics were sensitive to the lithography conditions such as the bias voltage. Successful oxidation produced junctions of nonlinear current-voltage characteristics, implying the formation of oxide barriers. Magnetoresistance (MR) at low temperatures resembled that of spin valves.
Keywords: AFM lithography; local oxidation; magnetic tunnel junction; magnetoresistance
DOI: 10.4283/JMAG.2009.14.4.172
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