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Perpendicular Magnetization of FePt Alloy Films Epitaxially Grown on Si(100)

Journal of Magnetics, Volume 14, Number 4, 31 Dec 2009, Pages 144-146

Jae Young Ahn (Department of Physics, Ewha Womans University), Nyun Jong Lee (Department of Physics, Ewha Womans University), Tae Hee Kim *

(Department of Physics, Ewha Womans University)

Abstract

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]N multilayers were prepared at room temperature to form a L1₀-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at 300 ^oC for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature L1₀- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

Keywords: perpendicular magnetic anisotropy; L10 FePt; epitaxial growth; molecular beam epitaxy

DOI: 10.4283/JMAG.2009.14.4.144

Full Text: PDF

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