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Electronic Structure and Magnetic Moments of Copper-atom in/on GaN Semiconductor |
Journal of Magnetics, Volume 15, Number 2, 30 Jun 2010, Pages 51-55 |
Byung-Sub Kang * (BK 21 Physics program and Department of Physics, Chungbuk National University), Haeng-Ki Lee (Department of Radiotechnology, Daegu Polytechnic College) |
Abstract |
The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of 0.54 μB per supercell.
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Keywords: nonmagnetic dopant; ferromagnetic ordering; thin film |
DOI: 10.4283/JMAG.2010.15.2.051 |
Full Text: PDF |
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