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Structural and Electrical Properties of SrRuO3 thin Film Grown on SrTiO3 (110) Substrate
Journal of Magnetics, Volume 18, Number 1, 31 Mar 2013, Pages 39-42
O-Ung Kwon (Department of Physics, Hankuk University of Foreign Studies), Namic Kwon (Department of Physics, Hankuk University of Foreign Studies), B. W. Lee (Department of Physics, Hankuk University of Foreign Studies), C. U. Jung * (Department of Physics, Hankuk University of Foreign Studies)
Abstract

We studied the structural and electrical properties of SrRuO3 thin films grown on SrTiO3 (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for SrRuO3 film with a very narrow rocking curve with FWHM = 0.045o and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ρ = 63 (205) μΩ·cm at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ρ(T) showed that the ferromagnetic transition temperature was ~10 K higher than that of SrRuO3 thin film grown on SrTiO3 (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in SrRuO3 thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.


 

Keywords: SrRuO3; thin film; PLD; polar substrate; resistivity
DOI: http://dx.doi.org/10.4283/JMAG.2013.18.1.039
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