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FeCoB Films with Large Saturation Magnetization and High Magnetic Anisotropy Field to Attain High Ferromagnetic Resonance Frequency
Journal of Magnetics, Volume 18, Number 2, 30 Jun 2013, Pages 155-158
Shigeki Nakagawa * (Department of Physical Electronics, Tokyo Institute of Technology), Ken-ichiro Hirata (Department of Physical Electronics, Tokyo Institute of Technology)
Abstract

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and backscattered particles which have a high in-plane magnetic anisotropy field Hk above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and Hk of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high Hk of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.


 

Keywords: FeCoB; high magnetic anisotropy field; anisotropic residual stress; ferromagnetic resonance frequency
DOI: http://dx.doi.org/10.4283/JMAG.2013.18.2.155
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