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Newly Designed Ion Beam Etcher with High Etch Rate

Journal of Magnetics, Volume 20, Number 4, 31 Dec 2015, Pages 366-370

Hee-Woon Cheong *

(Department of Electrical and Computer Engineering, Seoul National University)

Abstract

New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

Keywords: IBE (Ion Beam Etcher); M-ICP (Magnetized Inductively Coupled Plasma); Plasma density; R-wave; Etch rate

DOI: http://dx.doi.org/10.4283/JMAG.2015.20.4.366

Full Text: PDF

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